PSII3X10SLASH06 datasheet(1/5 Pages) POWERSEM

부품명	PSII3x10/06

상세설명	IGBT Module

PDF	5 Pages

Scroll/Zoom	100%

제조업체	POWERSEM [Powersem GmbH]

홈페이지	http://www.powersem.com

Logo

1 / 5 page

IGBT Module

PSII 3x10/06

I

C25

= 19 A

Sixpack

V

CES

= 600 V

V

CE(sat)typ. = 1.9 V

Features

•

NPT IGBT’s

- positive temperature coefficient of

saturation voltage

- fast switching

•

FRED diodes

- fast reverse recovery

- low forward voltage

•

Industry Standard Package

- solderable pins for PCB mounting

- isolated DCB ceramic base plat

e

•

UL registered, E 148688

Applications

•

AC drives

•

power supplies with power factor

correction

Advantages

•

Easy to mount with two screws

•

Space and weight savings

•

Improved temperature and power

cycling capability

•

High power density

•

Small and light weight

POWERSEM GmbH, Walpersdorfer Str. 53

D - 91126 Schwabach

Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20

ECO-PAC

TM 1

 2005 POWERSEM reserves the right to change limits, test conditions and dimensions

Preliminary Data Sheet

Caution: These devices are

sensitive to electrostatic discharge.

Users should observe proper ESD

handling precautions.

PSII 3x10/06

IGBTs

Symbol

Conditions

Maximum Ratings

V

CES

T

VJ = 25°C to 150°C

600

V

GES

± 20

V

I

C25

T

C = 25°C

19

A

I

C80

T

C = 80°C

14

A

I

CM

V

GE = ±15 V; RG = 82 Ω; TVJ = 125°C

20

A

V

CEK

RBSOA, Clamped inductive load; L = 100 µH

V

CES

t

SC

V

CE = 720 V; VGE = ±15 V; RG = 82 Ω; TVJ = 125°C

10

µs

(SCSOA)

non-repetitive

P

tot

T

C = 25°C

73

W

Symbol

Conditions

Characteristic Values

(T

VJ = 25°C, unless otherwise specified)

min.

typ.

max.

V

CE(sat)

I

C = 10 A; VGE = 15 V; TVJ =

25°C

1.9

2.4

V

T

VJ = 125°C

2.2

V

GE(th)

I

C = 0.35 mA; VGE = VCE

4.5

6.5

V

I

CES

V

CE = VCES;VGE = 0 V; TVJ =

25°C

0.6 mA

T

VJ = 125°C

2.7

mA

I

GES

V

CE = 0 V; VGE =

± 20 V

100

nA

t

d(on)

35

ns

t

r

35

ns

t

d(off)

230

ns

t

f

30

ns

E

on

0.4

mJ

E

off

0.3

mJ

C

ies

V

CE = 25 V; VGE = 0 V; f = 1 MHz

600

pF

Q

Gon

V

CE = 300 V; VGE = 15 V; IC = 10 A

39

nC

R

thJC

(per IGBT)

1.7 K/W

R

thJH

with heatsink compound (0.42 K/m.K; 50 µm)

3.4

K/W

Inductive load, T

VJ = 125°C

V

CE = 300 V; IC = 10 A

V

GE = ±15 V; RG = 82 Ω

2-3

4/G

1/A

G

4/N

6-7

1/H

N

5/A

A

H

K

5/H

8/N

8/G

NTC

L

유사한 부품 번호 - PSII3x10/06

제조업체	부품명	데이터시트	상세설명
Powersem GmbH	PSII30-06	512Kb / 4P	IGBT Module
	PSII30-12	516Kb / 4P	IGBT Module
	PSII30/06	512Kb / 4P	IGBT Module
	PSII30/12	516Kb / 4P	IGBT Module
	PSII35-06	144Kb / 5P	IGBT Module

More results

유사한 설명 - PSII3x10/06

제조업체	부품명	데이터시트	상세설명
eupec GmbH	FS10R06VL4B2	634Kb / 7P	IGBT-Module IGBT-modules
	FS10R12VT3	653Kb / 8P	IGBT-Module IGBT-modules
	FS10R12YT3	706Kb / 7P	IGBT-Module IGBT-modules
	FZ400R12KS4	287Kb / 8P	IGBT-Module / IGBT-inverter
Fuji Electric	2MBI200U2A-060	748Kb / 13P	IGBT module
eupec GmbH	FZ600R65KF1	179Kb / 10P	IGBT-Module
eupec GmbH	FS100R12KT3	308Kb / 8P	IGBT-Module
Fairchild Semiconductor	SM2G50US60	455Kb / 10P	IGBT MODULE
Semikron International	SK9GD063	131Kb / 2P	IGBT Module
Semikron International	SK30GB067	320Kb / 2P	IGBT Module

More results

PSII3x10/06 데이터시트(PDF) 1 Page - Powersem GmbH

PSII3x10/06 데이터시트(HTML) 1 Page - Powersem GmbH

유사한 부품 번호 - PSII3x10/06

유사한 설명 - PSII3x10/06

Html Pages

1 2 3 4 5

데이터시트 다운로드

링크 URL