tentative

data

sheet

product

still

under

development

IGBT Module

I

C80

=

29 A

V

CES

=

600 V

V

2.4 V

POWERSEM GmbH, Walpersdorfer Str. 53

D - 91126 Schwabach

Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20

Preliminary Data Sheet

Caution: These Devices are sensitive

to electrostatic discharge. Users should

observe proper ESD handling precautions.

PSII 30/06*

*NTC optional

Short Circuit SOA Capability

Square RBSOA

IGBTs

Symbol

Conditions

Maximum Ratings

V

CES

T

600

V

V

GES

± 20

V

I

C25

T

42.5

A

I

C80

T

29

A

I

CM

V

60

A

V

CEK

RBSOA, Clamped inductive load; L = 100 µH

V

CES

t

SC

V

10

µs

(SCSOA)

non-repetitive

P

tot

T

130

W

Symbol

Conditions

Characteristic Values

(T

min.

typ.

max.

V

CE(sat)

I

25°C

2.4

2.9

V

T

2.9

V

V

GE(th)

I

4.5

6.5

V

I

CES

V

T

25°C

0.6 mA

T

1.7 mA

I

GES

V

± 20 V

100

nA

t

d(on)

50

ns

t

r

50

ns

t

d(off)

270

ns

t

f

40

ns

E

on

1.4

mJ

E

off

1.0

mJ

C

ies

V

16

nF

R

thJC

(per IGBT)

0.96 K/W

R

thJH

with heatsink compound (0.42 K/m.K; 50 µm)

1.92

K/W

Inductive load, T

V

V

V3

V6

N1

G1

Q1

V10

V9

N15

K1

V13

V12

G15

V1

U1

A1

S15

D1

A9

A7

A15

R15

Features

•

Package with DCB ceramic

base plate

•

Isolation voltage 3000 V

∼

•

Planar glass passivated chips

•

Low forward voltage drop

•

Leads suitable for PC board

soldering

•

UL Release applied

Applications

•

AC and DC motor control

•

AC servo and robot drives

•

Power supplies

•

Welding inverters

Advantages

•

Easy to mount with four screws

•

Space and weight savings

•

Improved temperature and

power cycling capability

•

High power density

•

Small and light weight

typical picture, for pin

configuration see outline

drawing