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PRFMB50E6 데이터시트(PDF) 2 Page - Nihon Inter Electronics Corporation

부품명 PRFMB50E6
상세설명  IGBT Module-Dual
PDF  4 Pages
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제조업체  NIEC [Nihon Inter Electronics Corporation]
홈페이지  http://www.niec.co.jp
Logo NIEC - Nihon Inter Electronics Corporation

PRFMB50E6 데이터시트(HTML) 2 Page - Nihon Inter Electronics Corporation

  PRFMB50E6 Datasheet HTML 1Page - Nihon Inter Electronics Corporation PRFMB50E6 Datasheet HTML 2Page - Nihon Inter Electronics Corporation PRFMB50E6 Datasheet HTML 3Page - Nihon Inter Electronics Corporation PRFMB50E6 Datasheet HTML 4Page - Nihon Inter Electronics Corporation  
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00
日本インター株式会社
ＰＲＦＭＢ５０Ｅ６
01
2
3
4
5
0
10
20
30
40
50
60
70
80
90
100
Collector to Emitter Voltage VCE (V)
Fig.1- Output Characteristics (Typical)
TC=25°C
11V
10V
VGE=20V
9V
8V
12V
15V
01
2
3
4
5
0
10
20
30
40
50
60
70
80
90
100
Collector to Emitter Voltage VCE (V)
Fig.2- Output Characteristics (Typical)
TC=125°C
11V
10V
VGE=20V
9V
8V
12V
15V
04
8
12
16
20
0
2
4
6
8
10
12
14
16
Gate to Emitter Voltage VGE (V)
Fig.3- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
TC=25°C
IC=25A
100A
50A
0
4
8
121620
0
2
4
6
8
10
12
14
16
Gate to Emitter Voltage VGE (V)
Fig.4- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
IC=25A
100A
TC=125°C
50A
0
50
100
150
200
0
50
100
150
200
250
300
350
400
Total Gate Charge Qg (nC)
Fig.5- Gate Charge vs. Collector to Emitter Voltage (Typical)
0
2
4
6
8
10
12
14
16
VCE=300V
200V
100V
RL=6.0
TC=25°C
0.1
0.2
0.5
1
2
5
10
20
50
100
200
30
100
300
1000
3000
10000
Collector to Emitter Voltage VCE (V)
Fig.6- Capacitance vs. Collector to Emitter Voltage (Typical)
Cies
Coes
Cres
VGE=0V
f=1MHZ
TC=25°C



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