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HCF10C60 데이터시트(PDF) 2 Page - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD

부품명 HCF10C60
상세설명  Silicon Controlled Rectifier
PDF  3 Pages
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제조업체  HUASHAN [SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD]
홈페이지  http://www.huashan.com.cn
Logo HUASHAN - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD

HCF10C60 데이터시트(HTML) 2 Page - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD

  HCF10C60 Datasheet HTML 1Page - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD HCF10C60 Datasheet HTML 2Page - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD HCF10C60 Datasheet HTML 3Page - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD  
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Shantou Huashan Electronic Devices Co.,Ltd.
　
█ Electrical Characteristics（T
a=25℃　ｕｎｌｅｓｓ　ｏｔｈｅｒｗｉｓｅ　ｓｐｅｃｉｆｉｅｄ）
Symbol
Items
Min.
Typ.
Max.
Unit
Conditions
IDRM
Repetitive Peak Off-State
Current
10
200
uA
VAK=VDRM
Ta=25℃　
Ta=125℃
VTM
Peak On-State Voltage (1)
1.6
V
ITM=20A,tp=380µs
IGT
Gate Trigger Current（2）
15
mA
VAK =6V(DC), RL=10 ohm
VGT
Gate Trigger Voltage (2)
1.5
V
VAK =6V(DC), RL=10 ohm
Ta=25℃
VGD
Non-Trigger Gate Voltage
0.2
V
VAK =12V, RL=100 ohm
Ta=125℃
IH
Holding Current
20
mA
IT=100mA,Gate open,
Ta=25℃
Rth(j-c)
Thermal Resistance
1.3
℃/W
Junction to Case
Rth(j-a)
Thermal Resistance
60
℃/W
Junction to Ambient
dv/dt
Critical Rate of Rise Off-state
Voltage
200
V/µs
Linear slope up to VD=VDRM67%
Gate open
Tj=125℃
1.
Forward current applied for 1 ms maximum duration,duty cycle ≤1%.
2.
RGK current is not included in measurement
█　Performance Curves
FIGURE 1 – Gate Characteristics
FIGURE 2 –Maximum CaseTemperture
Gate
Current
(mA)
Average On-State Current (mA)
HCF10C60



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