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APT100DL60S 데이터시트(PDF) 2 Page - Microsemi Corporation

부품명 APT100DL60S
상세설명  Ultrasoft Recovery Rectifi er Diode
PDF  4 Pages
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제조업체  MICROSEMI [Microsemi Corporation]
홈페이지  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APT100DL60S 데이터시트(HTML) 2 Page - Microsemi Corporation

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APT100DL60B_S(G)
DYNAMIC CHARACTERISTICS
THERMAL AND MECHANICAL CHARACTERISTICS
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Symbol
Characteristic / Test Conditions
Min
Typ
Max
Unit
t
rr
Reverse Recovery Time
I
F = 1A, diF/dt = -100A/μs, VR = 30V, TJ = 25°C
110
ns
t
rr
Reverse Recovery Time
I
F = 100A, diF/dt = -200A/
μs V
R = 400V, TC = 25°C
487
Q
rr
Reverse Recovery Charge
2328
nC
I
RRM
Maximum Reverse Recovery Current
11
Amps
t
rr
Reverse Recovery Time
I
F = 100A, diF/dt = -200A/μs
V
R = 400V, TC = 125°C
716
ns
Q
rr
Reverse Recovery Charge
5954
nC
I
RRM
Maximum Reverse Recovery Current
18
Amps
t
rr
Reverse Recovery Time
I
F = 100A, diF/dt = -1000A/
μs V
R = 400V, TC = 125°C
333
ns
Q
rr
Reverse Recovery Charge
10002
nC
I
RRM
Maximum Reverse Recovery Current
49
Amps
Symbol
Characteristic / Test Conditions
Min
Typ
Max
Unit
R
θJC
Junction-to-Case Thermal Resistance
0.34
°C/W
W
T
Package Weight
0.22
oz
5.9
g
Torque
Maximum Mounting Torque
10
lb·in
1.1
N·m
0
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t
2
t2
t1
Note:
1 Continuous current limited by package lead temperature.



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