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APTC60DAM24T1G 데이터시트(PDF) 2 Page - Microsemi Corporation

부품명 APTC60DAM24T1G
상세설명  Boost chopper Super Junction MOSFET Power Module
PDF  6 Pages
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제조업체  MICROSEMI [Microsemi Corporation]
홈페이지  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTC60DAM24T1G 데이터시트(HTML) 2 Page - Microsemi Corporation

  APTC60DAM24T1G Datasheet HTML 1Page - Microsemi Corporation APTC60DAM24T1G Datasheet HTML 2Page - Microsemi Corporation APTC60DAM24T1G Datasheet HTML 3Page - Microsemi Corporation APTC60DAM24T1G Datasheet HTML 4Page - Microsemi Corporation APTC60DAM24T1G Datasheet HTML 5Page - Microsemi Corporation APTC60DAM24T1G Datasheet HTML 6Page - Microsemi Corporation  
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APTC60DAM24T1G
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All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VGS = 0V,VDS = 600V
Tj = 25°C
350
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 600V
Tj = 125°C
600
µA
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 47.5A
24
m
Ω
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 5mA
2.1
3
3.9
V
IGSS
Gate – Source Leakage Current
VGS = ±20 V, VDS = 0V
200
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
14.4
Coss
Output Capacitance
VGS = 0V ; VDS = 25V
f = 1MHz
17
nF
Qg
Total gate Charge
300
Qgs
Gate – Source Charge
68
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 300V
ID = 95A
102
nC
Td(on)
Turn-on Delay Time
21
Tr
Rise Time
30
Td(off)
Turn-off Delay Time
100
Tf
Fall Time
Inductive Switching (125°C)
VGS = 10V
VBus = 400V
ID = 95A
RG = 2.5Ω
45
ns
Eon
Turn-on Switching Energy
1350
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 10V ; VBus = 400V
ID = 95A ; RG = 2.5Ω
1040
µJ
Eon
Turn-on Switching Energy
2200
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 10V ; VBus = 400V
ID = 95A ; RG = 2.5Ω
1270
µJ
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
600
V
Tj = 25°C
100
IRM
Maximum Reverse Leakage Current
VR=600V
Tj = 125°C
500
µA
IF
DC Forward Current
Tc = 80°C
100
A
IF = 100A
1.6
2
IF = 200A
2
VF
Diode Forward Voltage
IF = 100A
Tj = 125°C
1.3
V
Tj = 25°C
160
trr
Reverse Recovery Time
Tj = 125°C
220
ns
Tj = 25°C
290
Qrr
Reverse Recovery Charge
IF = 100A
VR = 400V
di/dt =200A/µs
Tj = 125°C
1530
nC



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