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APTC60DHM35T3G 데이터시트(PDF) 7 Page - Microsemi Corporation

부품명 APTC60DHM35T3G
상세설명  Asymmetrical bridge Super Junction MOSFET Power Module
PDF  7 Pages
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제조업체  MICROSEMI [Microsemi Corporation]
홈페이지  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTC60DHM35T3G 데이터시트(HTML) 7 Page - Microsemi Corporation

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APTC60DHM35T3G
www.microsemi.com
7- 7
Typical diode Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
TJ=25°C
TJ=125°C
0
40
80
120
160
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VF, Anode to Cathode Voltage (V)
Forward Current vs Forward Voltage
IRRM vs. Current Rate of Charge
30 A
60 A
120 A
0
5
10
15
20
25
30
35
40
0
200
400
600
800 1000 1200
-diF/dt (A/µs)
TJ=125°C
VR=400V
Trr vs. Current Rate of Charge
30 A
60 A
120 A
50
75
100
125
150
175
0
200
400
600
800 1000 1200
-diF/dt (A/µs)
TJ=125°C
VR=400V
QRR vs. Current Rate Charge
30 A
60 A
120 A
0.0
0.5
1.0
1.5
2.0
0
200
400
600
800
1000 1200
-diF/dt (A/µs)
TJ=125°C
VR=400V
Capacitance vs. Reverse Voltage
0
100
200
300
400
500
1
10
100
1000
VR, Reverse Voltage (V)
0
20
40
60
80
100
25
50
75
100
125
150
175
Case Temperature (°C)
DC Forward Current vs. Case Temp.
Duty Cycle = 0.5
TJ=175°C
“COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
Technologies AG”.
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.



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