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APTDF100H1201G 데이터시트(PDF) 2 Page - Microsemi Corporation

부품명 APTDF100H1201G
상세설명  Fast Diode Full Bridge Power Module
PDF  4 Pages
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제조업체  MICROSEMI [Microsemi Corporation]
홈페이지  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTDF100H1201G 데이터시트(HTML) 2 Page - Microsemi Corporation

  APTDF100H1201G Datasheet HTML 1Page - Microsemi Corporation APTDF100H1201G Datasheet HTML 2Page - Microsemi Corporation APTDF100H1201G Datasheet HTML 3Page - Microsemi Corporation APTDF100H1201G Datasheet HTML 4Page - Microsemi Corporation  
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APTDF100H1201G
www.microsemi.com
2- 4
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
IF = 100A
2.4
3
IF = 150A
2.7
VF
Diode Forward Voltage
IF = 100A
Tj = 125°C
1.8
V
Tj = 25°C
100
IRM
Maximum Reverse Leakage Current
VR = 1200V
Tj = 125°C
500
µA
CT
Junction Capacitance
VR = 200V
110
pF
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Tj = 25°C
385
trr
Reverse Recovery Time
Tj = 125°C
480
ns
Tj = 25°C
1055
Qrr
Reverse Recovery Charge
Tj = 125°C
5240
nC
Tj = 25°C
6
IRRM
Reverse Recovery Current
IF = 100A
VR = 800V
di/dt = 200A/µs
Tj = 125°C
19
A
trr
Reverse Recovery Time
210
ns
Qrr
Reverse Recovery Charge
9.4
µC
IRRM
Reverse Recovery Current
IF = 100A
VR = 800V
di/dt=1000A/µs
Tj = 125°C
70
A
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max
Unit
RthJC
Junction to Case Thermal Resistance
0.55
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
V
TJ
Operating junction temperature range
-40
175
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
100
°C
Torque Mounting torque
To heatsink
M4
2.5
4.7
N.m
Wt
Package Weight
80
g



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