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APTM100H80FT1G 데이터시트(PDF) 4 Page - Microsemi Corporation

부품명 APTM100H80FT1G
상세설명  Full - Bridge MOSFET Power Module
PDF  5 Pages
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제조업체  MICROSEMI [Microsemi Corporation]
홈페이지  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTM100H80FT1G 데이터시트(HTML) 4 Page - Microsemi Corporation

  APTM100H80FT1G Datasheet HTML 1Page - Microsemi Corporation APTM100H80FT1G Datasheet HTML 2Page - Microsemi Corporation APTM100H80FT1G Datasheet HTML 3Page - Microsemi Corporation APTM100H80FT1G Datasheet HTML 4Page - Microsemi Corporation APTM100H80FT1G Datasheet HTML 5Page - Microsemi Corporation  
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APTM100H80FT1G
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Typical Performance Curve
Low Voltage Output Characteristics
TJ=25°C
TJ=125°C
0
5
10
15
20
25
0
5
10
15
20
VDS, Drain to Source Voltage (V)
VGS=10V
Low Voltage Output Characteristics
4.5V
5V
0
4
8
12
16
0
5
10
15
20
25
30
VDS, Drain to Source Voltage (V)
TJ=125°C
VGS=6, 7, 8 &9V
Normalized RDSon vs. Temperature
0
0.5
1
1.5
2
2.5
3
25
50
75
100
125
150
TJ, Junction Temperature (°C)
VGS=10V
ID=9A
Transfert Characteristics
TJ=25°C
TJ=125°C
0
2.5
5
7.5
10
12.5
15
0123456
VGS, Gate to Source Voltage (V)
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5
duty cycle
Ciss
Crss
Coss
1
10
100
1000
10000
0
50
100
150
200
VDS, Drain to Source Voltage (V)
Capacitance vs Drain to Source Voltage
Gate Charge vs Gate to Source
VDS=200V
VDS=500V
VDS=800V
0
2
4
6
8
10
12
0
20
40
60
80 100 120 140 160
Gate Charge (nC)
VGS=10V
ID=9A



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