MAXIMUM RATINGS

All Ratings: T

STATIC ELECTRICAL CHARACTERISTICS

RF POWER MOSFETs

N - CHANNEL ENHANCEMENT MODE

250V

150W

65MHz

The ARF461A and ARF461B comprise a symmetric pair of common drain RF power transistors designed for push-

pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been

optimized for both linear and high efficiency classes of operation.

•

Output Power = 150 Watts.

•

Gain = 13dB (Class AB)

•

Efficiency = 75% (Class C)

• RoHS Compliant

ARF461A(G)

ARF461B(G)

Common

Source

Microsemi Website - http://www.microsemi.com

Symbol

Parameter

ARF461AG/BG

Unit

V

DSS

Drain-Source Voltage

1000

V

V

DGO

Drain-Gate Voltage

1000

I

D

Continuous Drain Current @ T

6.5

A

V

GS

Gate-Source Voltage

±30

V

P

D

Total Power Dissipation @ T

250

W

R

Junction to Case

0.50

°C/W

T

Operating and Storage Junction Temperature Range

-55 to 150

°C

T

L

Lead Temperature: 0.063” from Case for 10 Sec.

300

Symbol

Parameter

Min

Typ

Max

Unit

BV

DSS

Drain-Source Breakdown Voltage (V

1000

V

V

DS(ON)

6.5

I

DSS

Zero Gate Voltage Drain Current (V

25

μA

Zero Gate Voltage Drain Current (V

250

I

GSS

Gate-Source Leakage Current (V

±100

nA

g

fs

Forward Transconductance (V

3

4

mhos

V

GS(TH)

Gate Threshold Voltage (V

3

5

Volts

CAUTION:

These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

TO

7