ARF466A datasheet(1/4 Pages) MICROSEMI

부품명	ARF466A

상세설명	RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE

PDF	4 Pages

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제조업체	MICROSEMI [Microsemi Corporation]

홈페이지	http://www.microsemi.com

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MAXIMUM RATINGS

All Ratings: T

C = 25°C unless otherwise speciﬁed.

RF POWER MOSFETs

N - CHANNEL ENHANCEMENT MODE

200V

300W

45MHz

The ARF466A and ARF466B comprise a symmetric pair of common source RF power transistors designed for push-

pull scientiﬁc, commercial, medical and industrial RF power ampliﬁer applications up to 45 MHz. They have been

optimized for both linear and high efﬁciency classes of operation.

• Speciﬁed 150 Volt, 40.68 MHz Characteristics:

•

Output Power = 300 Watts.

•

Gain = 16dB (Class AB)

•

Efﬁciency = 75% (Class C)

• Low Cost Common Source RF Package.

• Low Vth thermal coefﬁcient.

• Low Thermal Resistance.

• Optimized SOA for Superior Ruggedness.

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

DSS

R

DS(ON)

I

DSS

I

GSS

g

fs

V

GS(TH)

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

GS = 0V, ID = 250 μA)

Drain-Source On-State Resistance 1 (V

GS = 10V

, I

D = 6.5A

)

Zero Gate Voltage Drain Current (V

DS = 1000V, VGS = 0V)

Zero Gate Voltage Drain Current (V

DS = 800V, VGS = 0V, TC = 125°C)

Gate-Source Leakage Current (V

GS = ±30V, VDS = 0V)

Forward Transconductance (V

DS = 25V, ID = 6.5A)

Gate Threshold Voltage (V

DS = VGS, ID = 1mA)

MIN

TYP

MAX

1000

1.0

25

250

±100

3.3

7

9

2

4

UNIT

Volts

ohms

μA

nA

mhos

Volts

Symbol

V

DSS

V

DGO

I

D

V

GS

P

D

R

θJC

T

J,TSTG

T

L

Parameter

Drain-Source Voltage

Drain-Gate Voltage

Continuous Drain Current @ T

C = 25°C

Gate-Source Voltage

Total Power Dissipation @ T

C = 25°C

Junction to Case

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

ARF466A_B

1000

13

±30

357

0.35

-55 to 150

300

UNIT

Volts

Amps

Volts

Watts

°C/W

°C

ARF466A

ARF466B

TO-264

Common

Source

Microsemi Website - http://www.microsemi.com

CAUTION:

These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

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