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GC4410 데이터시트(PDF) 2 Page - Microsemi Corporation |
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GC4410 데이터시트(HTML) 2 Page - Microsemi Corporation |
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2 / 4 page ![]() GC4410 – GC4495 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 2 CONTROL DEVICES – HIGH VOLTAGE PIN DIODES TM ® Copyright 2006 Rev: 2009-02-03 RoHS Compliant . 1. Capacitance is measured at 1 MHz and -50 volts. 2. Resistance is measured using transmission loss techniques using a 30 style package. 3. These devices are not available in all case styles. Please consult the factory for specific package styles offered. DEVICE NOTES The tabulated specifications above are for package style 00. Diodes are also available in various packaged configurations. Some limitations apply. Consult factory for details. Each type offers trade offs in series resistance, junction capacitance, carrier lifetime and breakdown voltage; the proper choice of which depends on the end application. Reverse polarity diodes (NIP) and faster speed PIN and NIP diodes are also available. (See data sheets for GC4500, GC4200, and GC4300 series respectively.) ELECTRICAL CHARACTERISTICS AT 25 ˚C Model Number Vb (V) IR=10uA (Min) Cj 1 (pF) VR = 50V (Max) Rs 2 (Ω) IF = 100 mA F=100 MHz (Max) TL (uS) IR=6 mA IF=10 mA (Typ) P2 (˚C/W) THERMAL RESISTANCE (Max) GC4410 100 0.10 0.6 0.4 40 GC4411 100 0.25 0.5 0.6 25 GC4412 100 0.50 0.4 0.8 20 GC4413 3 100 0.75 0.3 1.2 10 GC4430 300 0.10 1.5 0.6 40 GC4431 300 0.25 1.2 1.2 30 GC4432 300 0.50 1.0 1.5 20 GC4433 3 300 0.75 0.8 2.0 10 GC4490 750 0.10 1.5 1.0 30 GC4491 750 0.25 1.2 2.0 25 GC4492 750 0.50 1.0 3.0 20 GC4493 3 750 0.75 0.8 5.0 10 GC4494 750 1.30 0.35 6.0 7 GC4495 750 2.50 0.30 7.5 5 |
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