Microsemi reserves the right to change, without notice, the specifications and information contained herein.

MDS140L

140 Watts, 50 Volts

Pulsed Avionics 1030 to 1090 MHz

GENERAL DESCRIPTION

The MDS140L is a high power COMMON BASE bipolar transistor. It is designed

for MODE-S ELM systems in the frequency band 1030-1090 MHz. The device has

gold thin-film metallization and diffused ballasting for proven highest MTTF. The

transistor includes input and output prematch for broadband capability. Low

thermal resistance package reduces junction temperature, extends life.

CASE OUTLINE

55AW Style 1

(Common Base)

ABSOLUTE MAXIMUM RATINGS

Power Dissipation

Device Dissipation @25

500 W (At rated pulse condition)

Voltage and Current

70 V

3.0 V

12 A

Temperatures

Storage Temperature

-65 to +150

°C

Operating Junction Temperature

+200

°C

ELECTRICAL CHARACTERISTICS @ 25

°C

SYMBOL

CHARACTERISTICS

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Emitter to Base Leakage

4.5

mA

Collector to Base Breakdown

70

V

Collector to Emitter Breakdown

70

V

Collector to Emitter Leakage

3.0

mA

DC – Current Gain

20

-

Thermal Resistance

0.15

°C/W

FUNCTIONAL CHARACTERISTICS @ 25

°C

SYMBOL

CHARACTERISTICS

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Power Out

140

W

Power Input

15.7

W

Power Gain

9.5

dB

Collector Efficiency

50

%

Pulse Droop

0.5

dB

1

Rise Time

100

ns

ψ

Load Mismatch

F = 1030/1090 MHz

ELM Burst: 32us(On),

18us(Off), N=48,

Period=23ms

2:1

-

NOTES: 1. At rated output power, pulse conditions and MSC fixture

2. ELM Burst Pulse: 32us(On), 18us(Off), N=48, Period=23ms

Rev. A : Oct. 2008