| 전자부품 데이터시트 검색엔진 |
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NX2116A 데이터시트(PDF) 3 Page - Microsemi Corporation |
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NX2116A 데이터시트(HTML) 3 Page - Microsemi Corporation |
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3 / 14 page ![]() NX2116/2116A/2116B/2117/2117A 3 Rev. 3.0 03/14/06 PARAMETER SYM Test Condition Min TYP MAX Units Under Voltage Lockout VCC-Threshold VCC_UVLO VCC Rising 3.8 4 4.2 V VCC-Hysteresis VCC_Hyst VCC Falling 0.2 V Oscillator Frequency FS 2116, 2117 300 kHz 2116A,2117A 600 kHz 2116B 1000 kHz Ramp-Amplitude Voltage VRAMP 1.5 V Max Duty Cycle 95 % Min Duty Cycle 0 % Error Amplifiers Transconductance 2000 umho Input Bias Current Ib 10 nA EN & SS NX2116,NX2117 6.8 NX2116A, NX2117A NX2116B Enable HI Threshold 1.25 V Enable Hysterises 150 mV High Side Driver (CL=3300pF) Rise Time THdrv(Rise) VBST-VSW=4.5V 50 ns Fall Time THdrv(Fall) VBST-VSW=4.5V 50 ns Low Side Driver (CL=3300pF) Output Impedance, Sourcing Current Rsource(Ldrv) I=200mA 0.9 ohm Output Impedance, Sinking Current Rsink(Ldrv) I=200mA 0.5 ohm Rise Time TLdrv(Rise) 10% to 90% 50 ns Fall Time TLdrv(Fall) 90% to 10% 50 ns OCP Adjust OCP current 40 uA Power Good(Pgood) Threshold Voltage as % of Vref FB ramping up 90 % Hysteresis 5 % Output Impedance , Sourcing Current Rsource(Hdrv) I=200mA ohm 0.65 30 ns 30 ns Deadband Time Tdead(H to L) SW going Low to Ldrv going High, 10% to 10% Tdead(L to H) Deadband Time Ldrv going Low to Hdrv going High, 10%-10% Soft Start time Tss mS Output Impedance , Sinking Current Rsink(Hdrv) I=200mA 0.9 ohm |
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