| 전자부품 데이터시트 검색엔진 |
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NX2139ACMTR 데이터시트(PDF) 4 Page - Microsemi Corporation |
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NX2139ACMTR 데이터시트(HTML) 4 Page - Microsemi Corporation |
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4 / 21 page ![]() NX2139A 4 Rev. 2.3 03/19/09 NOTE1: This parameter is guaranteed by design but not tested in production(GBNT). PARAMETER SYM Test Condition Min TYP MAX Units ENSW/MODE threshold and bias current PFM/Non Synchronous Mode 80% VCC VCC+0 .3V V Ultrasonic Mode 60% VCC 80% VCC V Synchronous Mode Leave it open or use limits in spec 2 60% VCC V Shutdown mode 0 0.8 V ENSW/MODE=VCC 5 uA ENSW/MODE=GND -5 uA LDO Controller Quiescent current PWM OFF, LDOEN=HI, IOUT=0mA 1 mA LDOEN logic high voltage 2 V LDOEN logic low voltage 0.8 V LDOFB reference voltage 0.728 0.75 0.773 V Output UVLO threshold 70 %Vref Open loop gain NOTE1 60 DB LDOFB input bias current 1 uA LDODrv sourcing current LDOFB=0.72V 2 mA LDODrv sinking current LDOFB=0.78V 2 mA LDO PGOOD threshold 90 %Vref LDO PGOOD propagation delay filter NOTE1 2 us LDO PGOOD impedance 13 ohm Current Limit Ocset setting current 20 24 28 uA Over temperature Threshold NOTE1 155 oC Hysteresis 15 oC Under voltage FB threshold 70 %Vref Over voltage Over voltage tripp point 125 %Vref Internal Schottky Diode Forward voltage drop Forward current=50mA 500 mV Input bias current |
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