| 전자부품 데이터시트 검색엔진 |
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MP6T3 데이터시트(PDF) 1 Page - Rohm |
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MP6T3 데이터시트(HTML) 1 Page - Rohm |
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1 / 4 page ![]() MP6T3 Transistors Rev.A 1/3 Medium Power Transistor ( −60V, −3A) MP6T3 Features 1) High speed switching. (tf : Typ. : 20ns at Ic= −3A) 2) Low saturation voltage, typically (Typ. : −200mV at Ic = −2A, IB = −0.2A) 3) Strong discharge power for inductive load and capacitance load. 4) Contain two 2SA2071-dies in a package. Applications Low frequency amplifier High speed switching Structure PNP Silicon epitaxial planar transistor Dimensions (Unit : mm) MPT6 (6) (5) (4) (1) (2) (3) Packaging specifications Inner circuit Package Code TR 1000 Taping Basic ordering unit(pieces) MP6T3 Type Absolute maximum ratings (Ta=25 °C) Parameter Collector-base voltage <Tr1, Tr2> Collector-emitter voltage Emitter-base voltage Collector current VCBO VCEO VEBO −60 V V V A A −60 −6 −3 IC ICP Power dissipation Junction temperature Range of storage temperature PD Tj Tstg W / ELEMENT W / TOTAL °C °C −6 2.0 1.4 Continuous Pulsed 150 −55 to +150 Symbol Limits Unit ∗1 Pw=10ms 1 Pulse ∗2 Mounted on a ceramic board ∗1 ∗2 (1) (1) Emitter <Tr1> (2) Base <Tr1> (3) Collector <Tr2> (4) Emitter <Tr2> (5) Base <Tr2> (6) Collector <Tr1> (2) (3) (6) (5) (4) <Tr1> <Tr2> |
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