VRF141

28V, 150W, 175MHz

The VRF141 is a gold-metallized silicon n-channel RF power transistor de-

signed for broadband commercial and military applications requiring high power

and gain without compromising reliability, ruggedness, or inter-modulation

distortion.

FEATURES

• Improved Ruggedness V

V

• 150W with 22dB Typical Gain @ 30MHz, 28V

• 150W with 13dB Typical Gain @ 175MHz, 28V

• Excellent Stability & Low IMD

• Common Source Configuration

• 30:1 Load VSWR Capability at Specified Operating Conditions

• Nitride Passivated

• Refractory Gold Metallization

• High Voltage Replacement for MRF141

• RoHS Compliant

Symbol

Parameter

VRF141

Unit

V

DSS

Drain-Source Voltage

80

V

I

D

Continuous Drain Current @ T

20

A

V

GS

Gate-Source Voltage

±40

V

P

D

Total Device dissipation @ T

300

W

T

STG

Storage Temperature Range

-65 to 150

°C

T

J

Operating Junction Temperature

200

RF POWER VERTICAL MOSFET

Maximum Ratings

All Ratings: T

Static Electrical Characteristics

Symbol

Parameter

Min

Typ

Max

Unit

V

(BR)DSS

Drain-Source Breakdown Voltage (V

80

V

V

DS(ON)

On State Drain Voltage (I

0.9

1.0

I

DSS

Zero Gate Voltage Drain Current (V

1.0

mA

I

GSS

Gate-Source Leakage Current (V

1.0

μA

g

fs

Forward Transconductance (V

5.0

mhos

V

GS(TH)

Gate Threshold Voltage (V

2.9

3.6

4.4

V

Microsemi Website - http://www.microsemi.com

Dynamic Characteristics

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

C

ISS

Input Capacitance

V

400

pF

C

oss

Output Capacitance

V

375

C

rss

Reverse Transfer Capacitance

f = 1MHz

50

Thermal Characteristics

Symbol

Characteristic

Min

Typ

Max

Unit

R

Junction to Case Thermal Resistance

0.60

°C/W

CAUTION:

These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.