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VRF151G 데이터시트(PDF) 4 Page - Microsemi Corporation

부품명 VRF151G
상세설명  RF POWER VERTICAL MOSFET
PDF  4 Pages
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제조업체  MICROSEMI [Microsemi Corporation]
홈페이지  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

VRF151G 데이터시트(HTML) 4 Page - Microsemi Corporation

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VRF151G
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,342,262 7,352,045 and foreign patents. US and Foreign patents pending. All Rights
Reserved.
Package Dimensions (inches)
All Dimensions are
± .005
HAZARDOUS MATERIAL
WARNING
The ceramic portion of the device
between leads and mounting
flange is beryllium oxide.
Beryllium oxide dust is highly
toxic when inhaled. Care must
be taken during handling and
mounting to avoid damage to this
area. These devices must never
be thrown away with general
industrial or domestic waste.
Figure 7, 175 MHz Test Circuit
+
R1
C5
C4
C10
C9
BIAS 0–6 V
INPUT
D.U.T.
OUTPUT
+
T2
L1
C11
C1
T1
C12
50 V
L2
C1
R2
C2
C3
C6
C7
C8
R1 - 100 Ohms, 1/2 W
R2 - 1.0 k Ohm, 1/2W
C1 - Arco 424
C3,C4,C7,C8,C9 - 1000 pF Chip
C5, C10 - 0.1 μF Chip
C11 - 0.47 μF Ceramic Chip, Kemet 1215 or Equivalent (100V)
C12 - Arco 422
L1 - 10 Turns AWG #18 Enameled Wire. Close Wound, 1/4” I.D.
L2 - Ferrite Beads of Suitable Material for 1.5 - 2.0 μH Inductance
Unless Otherwise Noted, All Chip Capacitors are ATC Type 100
or Equivalent.
T1 - 9:1 RF Transformer, Can be made of 15 - 18 Ohms
Semirigid Co - Ax, 62 - 90 Mils O.D.
T2 - 1:4 RF Transformer, Can be made of 16 - 18 Ohms Semirigid
Co - Ax, 70 - 90 Mils O.D.
Board Material - 0.062” Fiberglass (G10), 1 oz. Copper Clad, 2
sides, ε
r = 5.0
NOTE: For stability, the input transformer T1 must be loaded with
ferrite toroids or beads to increase the common mode inductance.
For operation below 100 MHz. The same is required for the output
transformer.
.435
.225
0.200
0.400
0.390
1.100
1.340
.005
.210
.860
.107
.060
.065 rad 2 PL
1
3
2
4
5
Pin 1. Drain
2. Drain
3. Gate
4. Gate
5. Source



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