CMBT2907 datasheet(1/2 Pages) RECTRON

부품명	CMBT2907

상세설명	PNP Silicon Planar Epitaxial Transistors

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> 200

MHz

Turn-off switching time

toff

< 100

ns

-ICon = 150 mA; -IBon = IBoff = 15 mA

DC Current Gain

hFE

> 30

fT

Transition frequency at f = 100 MHz

-IC = 50 mA; -VCE = 20 V

-VCE = 10V -IC = 500mA

> 50

< 10

nA

uA

nA

< 50

60

250

600

IE = 0, -VCB = 50V, Tj=125

oC

< 20

Open emitter; -IC= 10uA, IE= 0

60

Emitter-base breakdown voltage

> 40

-VCE(Sat)

< 1.6

< 2.6

-VEB = 0.5V, -VCE = 30V

-ICEX

-VEB = 3V, -VCE = 30V

-IBEX

Saturation Voltages

Collector-base breakdown voltage

-V(BR)CBO

-V(BR)CEO

-V(BR)EBO

-VBE(Sat)

Collector-emitter breakdown voltage

mW

Storage Temperature

Tstg

UNITS

Collector Base Voltage

-VCEO

-VCBO

V

Collector Emitter Voltage

5.0

CMBT2907

CMBT2907A

60

Emitter Base Voltage

-VEBO

DESCRIPTION

SYMBOL

40

5.0

-55 to +150

150

CONDITIONS

K/W

oC

CMBT2907

CMBT2907A

500

Open collector; -IE= 10uA, IC= 0

Open base; -IC= 10mA, IB= 0

> 60

UNITS

Collector Cut Off Current

Base Current w/reverse biased emitter junction

mA

-ICBO

IE = 0, -VCB = 50V

< 20

< 10

SYMBOL

Rth(j-a)

Ptot

Tj

Collector Current

-IC

DESCRIPTION

-ICBO

Junction to Ambient in free air

Power dissipation up to Tamb = 25

oC

Thermal Characteristics

Junction Temperature

-VBE(Sat)

< 1.3

-IC = 150mA, -IB = 15mA

V

-IC = 500mA, -IB = 50mA

> 60

> 5.0

-VCE(Sat)

< 0.4

PNP Silicon Planar Epitaxial Transistors

CMBT2907

Electrical Characteristics (at Ta=25

oC unless otherwise specified)

Unit: mm

Pin configuration:

1. BASE

2. EMITTER

3. COLLECTOR

1

2

3

Absolute Maximum Ratings (Ta = 25

oC unless specified otherwise)

SOT-23 SMD Package

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