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IRF6795MPbF 데이터시트(PDF) 2 Page - International Rectifier

부품명 IRF6795MPbF
상세설명  HEXFET Power MOSFET plus Schottky Diode
PDF  9 Pages
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRF6795MPbF 데이터시트(HTML) 2 Page - International Rectifier

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IRF6795MTRPbF
2
www.irf.com
‡ Pulse width ≤ 400µs; duty cycle ≤ 2%.
Notes:
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
25
–––
–––
V
∆ΒVDSS/∆TJ
Breakdown Voltage Temp. Coefficient
–––
11
––– mV/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
1.4
1.8
m
Ω
–––
2.4
3.2
VGS(th)
Gate Threshold Voltage
1.35
1.8
2.35
V
∆VGS(th)/∆TJ
Gate Threshold Voltage Coefficient
–––
-4.2
––– mV/°C
IDSS
Drain-to-Source Leakage Current
–––
–––
500
µA
–––
–––
5.0
mA
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
–––
-100
gfs
Forward Transconductance
100
–––
–––
S
Qg
Total Gate Charge
–––
35
53
Qgs1
Pre-Vth Gate-to-Source Charge
–––
8.8
–––
Qgs2
Post-Vth Gate-to-Source Charge
–––
4.8
–––
nC
Qgd
Gate-to-Drain Charge
–––
10
–––
Qgodr
Gate Charge Overdrive
–––
11
–––
See Fig. 15
Qsw
Switch Charge (Qgs2 + Qgd)
–––
14.8
–––
Qoss
Output Charge
–––
27
–––
nC
RG
Gate Resistance
–––
1.3
2.2
Ω
td(on)
Turn-On Delay Time
–––
16
–––
tr
Rise Time
–––
27
–––
ns
td(off)
Turn-Off Delay Time
–––
16
–––
tf
Fall Time
–––
11
–––
Ciss
Input Capacitance
–––
4280
–––
Coss
Output Capacitance
–––
1280
–––
pF
Crss
Reverse Transfer Capacitance
–––
550
–––
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
32
(Body Diode)
A
ISM
Pulsed Source Current
–––
–––
250
(Body Diode)Ãg
VSD
Diode Forward Voltage
–––
–––
0.75
V
trr
Reverse Recovery Time
–––
27
41
ns
Qrr
Reverse Recovery Charge
–––
34
51
nC
di/dt = 200A/µs i
TJ = 25°C, IS = 25A, VGS = 0V i
showing the
integral reverse
p-n junction diode.
VGS = 4.5V, ID = 25A i
VDS = VGS, ID = 10mA
VDS = VGS, ID = 100µA
TJ = 25°C, IF = 25A
VGS = 4.5V
ID = 25A
VGS = 0V
VDS = 13V
ID = 25A
VDD = 13V, VGS = 4.5VÃi
Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 5mA
VGS = 10V, ID = 32A i
VGS = 20V
VGS = -20V
VDS = 20V, VGS = 0V
VDS = 13V
VDS = 20V, VGS = 0V, TJ = 125°C
MOSFET symbol
RG = 1.8Ω
VDS = 13V, ID = 25A
Conditions
See Fig. 17
ƒ = 1.0MHz
VDS = 16V, VGS = 0V



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