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X22C12DM 데이터시트(PDF) 4 Page - Xicor Inc. |
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X22C12DM 데이터시트(HTML) 4 Page - Xicor Inc. |
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4 / 12 page ![]() X22C12 4 POWER-UP TIMING Symbol Parameter Max. Units tPUR(5) Power-up to Read Operation 100 µs tPUW(5) Power-up to Write or Store Operation 5 ms 3817 PGM T07 MODE SELECTION CE WE RECALL STORE I/O Mode H X H H Output High Z Not Selected(3) L H H H Output Data Read RAM L L H H Input Data High Write “1” RAM L L H H Input Data Low Write “0” RAM X H L H Output High Z Array Recall H X L H Output High Z Array Recall X H H L Output High Z Nonvolatile Store(4) H X H L Output High Z Nonvolatile Store(4) 3817 PGM T05.1 ENDURANCE AND DATA RETENTION Parameter Min. Units Endurance 100,000 Data Changes Per Bit Store Cycles 1,000,000 Store Cycles Data Retention 100 Years 3817 PGM T06 A.C. CONDITIONS OF TEST Input Pulse Levels 0V to 3V Input Rise and Fall Times 10ns Input and Output Timing Levels 1.5V 3817 PGM T04.1 EQUIVALENT A.C. LOAD CIRCUIT Notes: (3) Chip is deselected but may be automatically completing a store cycle. (4) STORE = LOW is required only to initiate the store cycle, after which the store cycle will be automatically completed (e.g. STORE = X). (5) tPUR and tPUW are the delays required from the time VCC is stable until the specified operation can be initiated. These parameters are periodically sampled and not 100% tested. 3815 FHD F09.1 919 Ω 497 Ω OUTPUT 100pF 5V |
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