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HFS4N60 데이터시트(PDF) 3 Page - SemiHow Co.,Ltd.

부품명 HFS4N60
상세설명  600V N-Channel MOSFET
PDF  7 Pages
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제조업체  SEMIHOW [SemiHow Co.,Ltd.]
홈페이지  http://www.semihow.com
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HFS4N60 데이터시트(HTML) 3 Page - SemiHow Co.,Ltd.

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◎ SEMIHOW REV.A0,July 2005
V
DS, Drain-Source Voltage [V]
101
100
10-1
10-1
100
101
※ Note :
1. 250㎲ Pulse Test
2. TC=25℃
V
Top:
15.0V
10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
Bottem
5.0V
※ Note :
1. VDS=40V
2. 250㎲ Pulse Test
150℃
25℃
-55℃
101
100
10-1
2
4
6
8
10
V
SD, Source-Drain Voltage [V]
※ Note :
1. VGS=0V
2. 250㎲ Pulse Test
150℃
25℃
0.2
0.4
0.6
0.8
1.0
1.2
1.4
101
100
10-1
V
GS, Gate-Source Voltage [V]
I
D, Drain Current [A]
12
10
8
6
4
2
0
0
2
4
6
8
10
12
V
GS=20V
V
GS=10V
※ Note : T
J=25℃
Typical Characteristics
0
2
4
6
8
10
12
14
16
0
2
4
6
8
10
12
Q
G, Total Gate Charge [nC]
* Note : I
D = 4A
V
DS = 300V
V
DS = 120V
V
DS = 480V
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
10
-1
10
0
10
1
0
200
400
600
800
1000
1200
C
iss = Cgs + Cgd (Cds = shorted)
C
oss = Cds + Cgd
C
rss = Cgd
* Note ;
1. V
GS = 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
V
DS, Drain-Source Voltage [V]



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