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HFS10N60 데이터시트(PDF) 3 Page - SemiHow Co.,Ltd. |
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HFS10N60 데이터시트(HTML) 3 Page - SemiHow Co.,Ltd. |
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3 / 7 page ![]() ◎ SEMIHOW REV.A0,Nov 2005 Figure 1. On Region Characteristics Figure 2. Transfer Characteristics Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics Typical Characteristics 0 5 10 15 20 25 30 35 0 2 4 6 8 10 12 V DS = 300V V DS = 120V V DS = 480V ※ Note : I D = 9.5A Q G, Total Gate Charge [nC] 10 -1 10 0 10 1 0 300 600 900 1200 1500 1800 C iss = Cgs + Cgd (Cds = shorted) C oss = Cds + Cgd C rss = Cgd ※ Note ; 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss V DS, Drain-Source Voltage [V] |
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