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SS6845G 데이터시트(PDF) 3 Page - Silicon Standard Corp. |
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SS6845G 데이터시트(HTML) 3 Page - Silicon Standard Corp. |
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3 / 13 page ![]() www.SiliconStandard.com 3 of 13 SS6845G 7/21/2005 Rev.3.01 ELECTRICAL CHARACTERISTICS (TA=25°C, CFLY=0.22µF, CIN=2.2µF, COUT=2.2µF, unless otherwise specified.) (Note 1) PARAMETER TEST CONDITIONS SYMBOL MIN. TYP. MAX. UNIT Input voltage VIN 2.7 5.0 V 2.7V ≤ VIN< 3.3V, IOUT≤ 30mA 4.8 5.0 5.2 Output voltage 3.3V ≤ VIN≤ 5.0V, IOUT≤ 60mA VOUT 4.8 5.0 5.2 V Continuous output current VIN=3V, VOUT=5.0V SHDN =VIN IOUT 60 mA Supply current 2.7V ≤ VIN≤ 5.0V, IOUT=0 , SHDN =VIN ICC 13 30 µA Shutdown current 2.7V ≤ VIN≤ 5.0V, IOUT=0 , SHDN =0V I SHDN 0.01 1.0 µA Output ripple VIN =3V, IOUT=50mA VR 60 mV Efficiency VIN =2.7V , IOUT=30mA η 83 % Switching frequency Oscillator free-running fOSC 650 KHz Shutdown input threshold (High) VIH 1.4 V Shutdown input threshold (Low) VIL 0.3 V Shutdown input current (High) SHDN =VIN IIH -1 1 µA Shutdown input current (Low) SHDN = 0V IIL -1 1 µA Vout turn-on time VIN =3V, IOUT = 0mA tON 0.5 mS Output short-circuit current VIN=3V, VOUT= 0V, SHDN = VIN ISC 170 mA Note1: Specifications are production tested at TA=25°C. Specifications over the -40°C to 85°C operating temperature range are assured by design, characterization and correlation with Statistical Quality Controls (SQC). |
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