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SSM40T03GS 데이터시트(PDF) 4 Page - Silicon Standard Corp. |
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SSM40T03GS 데이터시트(HTML) 4 Page - Silicon Standard Corp. |
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4 / 5 page ![]() www.SiliconStandard.com 4 of 5 Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 1 10 100 0.1 1 10 100 V DS ,Drain-to-Source Voltage (V) T C =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , Pulse Width (s) PDM Duty Factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor = 0.5 Single Pulse 0 3 6 9 12 036 9 12 Q G , Total Gate Charge (nC) I D =18A V DS =10V V DS =15V V DS =20V 10 100 1000 1 8 15 22 29 V DS ,Drain-to-Source Voltage (V) f=1.0MHz C iss C oss C rss td(on) tr td(off) t f VDS VGS 10% 90% Q VG 4.5V QGS QGD QG Charge SSM40T03GP,S 9/16/2005 Rev.3.1 |
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