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SSM90T03GS 데이터시트(PDF) 4 Page - Silicon Standard Corp. |
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SSM90T03GS 데이터시트(HTML) 4 Page - Silicon Standard Corp. |
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4 / 5 page ![]() www.SiliconStandard.com 4 of 5 SSM90T03GP,S 2/17/2005 Rev.2.3 Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform td(on) tr td(off) t f VDS VGS 10% 90% Q VG 4.5V QGS QGD QG Charge 100 1000 10000 1 5 9 1317212529 V DS ,Drain-to-Source Voltage (V) f=1.0MHz C iss C oss C rss 0 2 4 6 8 10 12 14 0 20 40 60 80 100 120 Q G , Total Gate Charge (nC) V DS =15V V DS =20V V DS =24V I D =40 1 10 100 1000 0.1 1 10 100 V DS ,Drain-to-Source Voltage (V) T c =25 o C Single 1ms 10ms 100m s 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse |
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