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SSM4532M 데이터시트(PDF) 1 Page - Silicon Standard Corp. |
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SSM4532M 데이터시트(HTML) 1 Page - Silicon Standard Corp. |
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1 / 11 page ![]() www.SiliconStandard.com 1 of 11 SSM4532M COMPLEMENTARY N AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement N-ch BV DSS +30V Low on-resistance R DS(ON) 50m Ω Fast switching ID +5A P-ch BV DSS -30V RDS(ON) 70m Ω Description ID -4A Absolute Maximum Ratings Symbol Parameter Rating Units N-channel P-channel VDS Drain-Source Voltage +30 -30 V VGS Gate-Source Voltag ±20 ±20 V I D @ TA=25°C Continuous Drain Current 3 +5 -4 A I D @ TA=70°C Continuous Drain Current 3 +4 -3.2 A I DM Pulsed Drain Current 1,4 +20 -20 A PD @ TA=25°C Total Power Dissipation 2.0 W Linear Derating Factor 0.016 W/°C TSTG Storage Temperature Range -55 to 150 °C TJ Operating Junction Temperature Range -55 to 150 °C Symbol Value Unit Rthj-amb Thermal Resistance Junction-ambient Max. 62.5 °C/W Parameter Thermal Data MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost- effectiveness. The SO-8 package is widely preferred for commercial and industrial surface mount applications and is well suited for low-voltage applications such as DC/DC converters. G2 D2 S2 G1 D1 S1 S1 G1 S2 G2 D1 D1 D2 D2 SO-8 Rev.2.01 7/01/2004 |
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