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SSM4565M 데이터시트(PDF) 7 Page - Silicon Standard Corp. |
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SSM4565M 데이터시트(HTML) 7 Page - Silicon Standard Corp. |
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7 / 8 page ![]() www.SiliconStandard.com 4 of 5 SSM4565M/GM 12/10/2004 Rev.2.01 P-channel Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform td(on) tr td(off) t f VDS VGS 10% 90% Q VG -4.5V QGS QGD QG Charge 0 4 8 12 16 0.0 10.0 20.0 30.0 40.0 50.0 Q G , Total Gate Charge (nC) I D =-6A V DS =-32V 100 1000 10000 1 5 9 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) f=1.0MHz C iss C oss C rss 0.01 0.1 1 10 100 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) T A =25 o C Single Pulse 100us 1ms 10ms 100ms 1s DC 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=135 oC/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse |
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