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SSM9922 데이터시트(PDF) 2 Page - Silicon Standard Corp.

부품명 SSM9922
상세설명  DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
PDF  5 Pages
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제조업체  SSC [Silicon Standard Corp.]
홈페이지  http://www.siliconstandard.com
Logo SSC - Silicon Standard Corp.

SSM9922 데이터시트(HTML) 2 Page - Silicon Standard Corp.

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SSM9922(G)EO
Rev.2.01 12/06/2004
Electrical Characteristics @ Tj=25
oC (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
20
-
-
V
∆BV
DSS/ ∆ Tj
Breakdown Voltage Temperature Coefficient
Reference to 25°C, ID=1mA
-
0.05
-
V/°C
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=4.5V, ID=6A
-
-
15
m
Ω
VGS=2.5V, ID=4A
-
-
20
m
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=1mA
0.5
-
1.2
V
gfs
Forward Transconductance
VDS=4.5V, ID=6A
-
22
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=20V, VGS=0V
-
-
25
uA
Drain-Source Leakage Current (Tj=70
oC)
VDS=16V ,VGS=0V
-
-
100
uA
IGSS
Gate-Source Leakage
VGS=±12V
-
-
±10
uA
Qg
Total Gate Charge
2
ID=6A
-
25
40
nC
Qgs
Gate-Source Charge
VDS=16V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
9
-
nC
td(on)
Turn-on Delay Time
2
VDS=15V
-
11
-
ns
tr
Rise Time
ID=1A
-
12
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω , VGS=4.5V
-
47
-
ns
tf
Fall Time
RD=15Ω
-23
-
ns
Ciss
Input Capacitance
VGS=0V
-
1730 2770
pF
Coss
Output Capacitance
VDS=20V
-
280
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
240
-
pF
Rg
Gate Resistance
f=1.0MHz
-
2.2
-
Ω
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
VSD
Forward On Voltage
2
IS=0.84A,VGS=0V
-
-
1.2
V
trr
Reverse Recovery Time
2
IS=6A, VGS=0V,
-
24
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
18
-
nC
Notes:
1.Pulse width limited by max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2 copper pad of FR4 board ; 208°C/W when mounted on min. copper pad.



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