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SSM9928EO 데이터시트(PDF) 1 Page - Silicon Standard Corp. |
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SSM9928EO 데이터시트(HTML) 1 Page - Silicon Standard Corp. |
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1 / 6 page ![]() www.SiliconStandard.com 1 of 6 SSM9928(G)EO Rev.2.01 12/06/2004 DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Low on-resistance BV DSS 20V Capable of 2.5V gate drive RDS(ON) 23m Ω Ideal for DC/DC battery applications ID 5A Description Absolute Maximum Ratings Symbol Units VDS V VGS V ID @ TA=25°C ID @ TA=70°C IDM A PD @ TA=25°C W/°C TSTG TJ Symbol Value Unit Rthj-a Thermal Resistance Junction-ambient 3 Max. 125 °C/W Thermal Data Parameter Storage Temperature Range Total Power Dissipation 1 W -55 to 150 °C Operating Junction Temperature Range -55 to 150 °C Linear Derating Factor 0.008 Drain Current 3, V GS @ 4.5V 3.5 A Pulsed Drain Current 1 25 Gate-Source Voltage ±12 Drain Current 3, V GS @ 4.5V 5 A Parameter Rating Drain-Source Voltage 20 S1 G1 D1 S2 G2 D2 Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. D2 S2 S2 G2 D1 S1 S1 G1 TSSOP-8 This device is available with Pb-free lead finish (second-level interconnect) as SSM9928GEO. |
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