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SSM9930M 데이터시트(PDF) 7 Page - Silicon Standard Corp. |
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SSM9930M 데이터시트(HTML) 7 Page - Silicon Standard Corp. |
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7 / 8 page ![]() www.SiliconStandard.com 7 of 8 SSM9930M 10/21/2004 Rev.1.01 P-channel Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) 0.01 0.05 0.1 0.2 DUTY=0.5 Single Pulse PDM t T Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 135°C/W 0.02 0.01 0.1 1 10 100 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) T A =25 o C Single Pulse 1s 1ms 10ms 100ms DC 10 100 1000 10000 1 5 9 131721 2529 -V DS , Drain-to-Source Voltage (V) f=1.0MHz Ciss Coss Crss 0 2 4 6 8 10 12 14 0 2 4 6 8 10 12 14 Q G , Total Gate Charge (nC) I D =-5A V DS =-15V td(on) tr td(off) t f VDS VGS 10% 90% Q VG 4.5V QGS QGD QG Charge |
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