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BAS20 데이터시트(PDF) 2 Page - Zetex Semiconductors

부품명 BAS20
상세설명  SILICON HIGH SPEED SWITCHING DIODE
PDF  2 Pages
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제조업체  ZETEX [Zetex Semiconductors]
홈페이지  http://www.diodes.com/
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BAS20 데이터시트(HTML) 2 Page - Zetex Semiconductors

  BAS20 Datasheet HTML 1Page - Zetex Semiconductors BAS20 Datasheet HTML 2Page - Zetex Semiconductors  
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SOT23 SILICON HIGH
SPEED SWITCHING DIODE
ISSUE 2 – JANUARY 1995
PIN CONFIGURATION
PARTMARKING DETAILS
BAS19 – A8
BAS20 – A81
BAS21 – A82
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
BAS19
BAS20
BAS21
UNIT
Continuous Reverse Voltage
VR
100
150
200
V
Repetative Peak Reverse Voltage
VRRM
120
200
250
V
Average Forward Rectified Current
IF(AV)
200
mA
Forward Current
IF
200
mA
Repetative Peak Forward Current
IFRM
625
mA
Power Dissipation at Tamb=25°C
Ptot
330
mW
Operating and Storage Temperature
Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Reverse
Breakdown
Voltage
V(BR)
BAS19
120
V
IR=100µA (1)
BAS20
200
V
IR=100µA (1)
BAS21
250
V
IR=100µA (2)
Reverse Current
IR
100
100
nA
µ
A
VR=VRmax
VR=VRmax, TJ=150°C
Static Forward Voltage VF
1.00
1.25
IF=100mA
IF=200mA
Differential Resistance rdiff
5
Ω
IF=10mA
Diode Capacitance
Cd
5pF
f=1MHz
Reverse Recovery Time trr
50
ns
IF=30mA to IR=30mA
RL=10Ω measured at IR=3mA
(1) Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
(2) At zero life time, measured under pulse conditions to avoid excessive dissipation and voltage
limited to 275V
Spice parameter data is available upon request for this device
BAS19
BAS20
BAS21
PAGE NO
1
3
2
SOT23
BAS19
BAS20
BAS21

!
SWITCHING TIME TEST DATA
Sampling Oscilloscope
RIN =50Ω
DUT
RS =50Ω
Pulse Generator
trr
+IF
t
IR*
tp(tot)
tp
90%
10%
90%
V
Recovery Time Equivalent Test Circuit
Input Signal
Output Signal
Input Signal
Total Pulse Duration
tp(tot) 2µs
Duty Factor
δ
0.0025
Rise Time of Reverse
Pulse
tr
0.6ns
Reverse Pulse Duration
tp
100ns
Oscilloscope
Rise Time
tr
0.35ns
Circuit Capacitance*
C
<1pF



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