74LVC3G07GD datasheet(7/16 Pages) NXP

7 / 16 page

74LVC3G07_6

Product data sheet

Rev. 06 — 16 June 2008

7 of 16

NXP Semiconductors

74LVC3G07

Triple buffer with open-drain output

11. Dynamic characteristics

[1]

Typical values are measured at Tamb =25 °C and VCC = 1.8 V, 2.5 V, 2.7 V, 3.3 V and 5.0 V respectively.

[2]

tpd is the same as tPLZ and tPZL.

[3]

CPD is used to determine the dynamic power dissipation (PD in µW).

PD =CPD × VCC2 × fi × N+ Σ(CL × VCC2 × fo) where:

fi = input frequency in MHz;

fo = output frequency in MHz;

CL = output load capacitance in pF;

VCC = supply voltage in V;

N = number of inputs switching;

Σ(C

L × VCC

× f

o) = sum of outputs.

12. Waveforms

Table 8.

Dynamic characteristics

Voltages are referenced to GND (ground = 0 V). For test circuit see Figure 9.

Symbol Parameter

Conditions

−40 °C to +85 °C

−40 °C to +125 °C Unit

Min

Typ[1]

Max

Min

Max

tpd

propagation delay

nA to nY; see Figure 8

[2]

VCC = 1.65 V to 1.95 V

1.0

2.9

6.7

1.0

8.4

VCC = 2.3 V to 2.7 V

0.5

1.7

4.3

0.5

5.5

VCC = 2.7 V

1.0

2.3

4.2

1.0

5.3

VCC = 3.0 V to 3.6 V

0.5

2.1

3.7

0.5

4.7

VCC = 4.5 V to 5.5 V

0.5

1.5

2.9

0.5

3.7

CPD

power dissipation

capacitance

VI = GND to VCC; VCC = 3.3 V

[3]

6.5

Measurement points are given in Table 9.

VOL is the typical output voltage drop that occur with the output load.

Fig 8.

The input (nA) to output (nY) propagation delays

mna528

tPLZ

nY output

nA input

VCC

VOL

GND

tPZL

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