UBA2021_4

© NXP B.V. 2008. All rights reserved.

Product data sheet

Rev. 04 — 25 July 2008

7 of 16

NXP Semiconductors

UBA2021

630 V driver IC for CFL and TL lamps

7.12 Frequency and change in frequency

change in frequency will be gradual, no steps in frequency will occur. Changes in

frequency caused by a change in voltage at the CI-pin show a rather constant

∆f/∆t over

the entire frequency range. The following rates are realized (at a frequency of 85 kHz and

with a 100 nF capacitor connected to the PCI-pin):

∆f/∆t is between 15 kHz/ms and 37.5 kHz/ms.

∆f/∆t for a decrease in frequency is between

−6 kHz/ms and −15 kHz/ms.

∆f/∆t for a decrease in frequency is between

−150 Hz/ms and −375 Hz/ms.

7.13 Ground pins

The PGND-pin is the ground reference of the IC with respect to the application. As an

exception the SGND-pin provides a local ground reference for the components connected

to the CP-pin, CI-pin, RREF-pin and thee CF-pin. For this purpose the PGND-pin and

SGND-pin are short circuited internally. External connection of the PGND-pin and the

SGND-pin is not preferred. The sum of currents flowing out of the CP-pin, CI-pin,

RREF-pin, CF-pin and the SGND-pin must remain zero at all time.

7.14 Charge coupling

Due to parasitic capacitive coupling to the high voltage circuitry, all pins are burdened with

a repetitive charge injection. Given the typical application in Figure 7, the RREF-pin and

operation of the IC is guaranteed, independent of the current level. Charge coupling at

levels. Charge coupling at current levels below 20 mA will not interfere with the accuracy

of any parameter.

8.

Limiting values

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134). All voltages referenced to

ground.

Symbol

Parameter

Conditions

Min

Max

Unit

high side floating supply

voltage

operating

-

570

V

t

≤ 0.5 s

-

630

V

clamp current

-

35

mA

input voltage pin RS

−2.5

+2.5

V

transient of 50 ns

−15

+2.5

V

SR

slew rate at pins S1, G1

and FS (with respect to

ground)

−4

+4

V/ns

P

power dissipation

-

500

mW

ambient temperature

−40

+150

°C

junction temperature

−40

+150

°C