BAS321 datasheet(3/9 Pages) NXP

3 / 9 page

2004 Jan 26

NXP Semiconductors

Product data sheet

General purpose diode

BAS321

CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

THERMAL CHARACTERISTICS

Notes

Soldering point of cathode tab.

Device mounted on an FR4 printed circuit board.

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

forward voltage

see Fig.3

IF = 100 mA

IF = 200 mA

1.25

reverse current

see Fig.5

VR = 200 V

100

VR = 200 V; Tj = 150 °C

100

µA

diode capacitance

f = 1 MHz; VR = 0; see Fig.6

trr

reverse recovery time

when switched from IF = 30 mA to

IR = 30 mA; RL = 100 Ω; measured at

IR = 3 mA; see Fig.8

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth(j-s)

thermal resistance from junction to soldering point

Ts = 90°C; note 1

130

K/W

Rth(j-a)

thermal resistance from junction to ambient

note 2

366

K/W

BAS321 데이터시트(PDF) 3 Page - NXP Semiconductors

BAS321 데이터시트(HTML) 3 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9

데이터시트 다운로드

링크 URL