2003 Aug 12

2

NXP Semiconductors

Product data sheet

High voltage switching diode

BAS521

FEATURES

• High switching speed: max. 50 ns

• High continuous reverse voltage: 300 V

• Repetitive peak forward current: 625 mA

• Ultra small plastic SMD package.

APPLICATIONS

• High speed switching

• High voltage switching.

DESCRIPTION

The BAS521 is a high-voltage switching diode fabricated in

planar technology and encapsulated in an ultra small

SOD523 (SC-79) plastic SMD package.

PINNING

PIN

DESCRIPTION

1

cathode

2

anode

;

Top view

MAM408

Fig.1

Simplified outline (SOD523; SC-79), and

symbol.

Marking code: L4.

The marking bar indicates the cathode.

LIMITING VALUES

In accordance with the absolute Maximum Rating System (IEC 60134).

Note

1.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

continuous reverse voltage

−

300

V

repetitive peak reverse voltage

−

300

V

continuous forward current

−

250

mA

repetitive peak forward current

−

1

A

non-repetitive peak forward current

prior to surge

−

4.5

A

total power dissipation

−

500

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C