BCP53 datasheet(9/15 Pages) NXP

9 / 15 page

BC640_BCP53_BCX53_8

Product data sheet

Rev. 08 — 22 February 2008

9 of 15

NXP Semiconductors

BC640; BCP53; BCX53

80 V, 1 A PNP medium power transistors

Characteristics

[1]

Pulse test: tp ≤ 300 µs; δ = 0.02.

FR4 PCB, mounting pad for collector 6 cm2

Fig 9.

Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;

typical values

006aaa818

102

103

Zth(j-a)

(K/W)

10−1

10−5

10−2

10−4

102

10−1

tp (s)

10−3

103

duty cycle =

0.01

0.02

0.05

0.1

0.2

0.33

0.5

0.75

1.0

Table 8.

Characteristics

Tamb =25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

ICBO

collector-base cut-off

current

VCB = −30 V; IE =0A

−100

VCB = −30 V; IE =0A;

Tj = 150 °C

−10

µA

IEBO

emitter-base cut-off

current

VEB = −5 V; IC =0A

−100

hFE

DC current gain

VCE = −2V

IC = −5mA

IC = −150 mA

250

IC = −500 mA

[1] 40

DC current gain

VCE = −2V

hFE selection -10

IC = −150 mA

160

hFE selection -16

IC = −150 mA

100

250

VCEsat

collector-emitter

saturation voltage

IC = −500 mA;

IB = −50 mA

[1] --

−0.5

VBE

base-emitter voltage

VCE = −2 V; IC = −500 mA [1] --

−1V

collector capacitance

VCB = −15 V; IE =ie =0A;

f=1MHz

-15

transition frequency

VCE = −5 V; IC = −50 mA;

f = 100 MHz

145

MHz

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