BC856S_2

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 02 — 19 February 2009

2 of 12

NXP Semiconductors

BC856S

65 V, 100 mA PNP/PNP general-purpose transistor

3.

Ordering information

4.

Marking

[1]

* = -: made in Hong Kong

* = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China

5.

Limiting values

[1]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2]

Table 3.

Ordering information

Type number

Package

Name

Description

Version

BC856S

SC-88

plastic surface-mounted package; 6 leads

SOT363

Table 4.

Marking codes

Type number

Marking code[1]

BC856S

5F*

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per transistor

collector-base voltage

open emitter

-

−80

V

collector-emitter voltage

open base

-

−65

V

emitter-base voltage

open collector

-

−5V

collector current

-

−100

mA

total power dissipation

[1] -

220

mW

[2] -

250

mW

Per device

total power dissipation

[1] -

300

mW

[2] -

400

mW

junction temperature

-

150

°C

ambient temperature

−65

+150

°C

storage temperature

−65

+150

°C