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BF621 데이터시트(PDF) 7 Page - NXP Semiconductors |
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BF621 데이터시트(HTML) 7 Page - NXP Semiconductors |
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7 / 10 page ![]() 2004 Dec 14 7 NXP Semiconductors Product data sheet PNP high-voltage transistors BF621; BF623 CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector-base cut-off current IE = 0 A; VCB = −200 V − −10 nA IE = 0 A; VCB = −200 V; Tj = 150 °C − −10 µA IEBO emitter-base cut-off current IC = 0 A; VEB = −5 V − −50 nA hFE DC current gain IC = −25 mA; VCE = −20 V 50 − VCEsat collector-emitter saturation voltage IC = −30 mA; IB = −5 mA − −800 mV Cre feedback capacitance IC = ic = 0 A; VCE = −30 V; f = 1 MHz − 1.6 pF fT transition frequency IC = −10 mA; VCE = −10 V; f = 100 MHz 60 − MHz |
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