ASI10596 datasheet(1/2 Pages) ASI

부품명	ASI10596

상세설명	NPN SILICON RF POWER TRANSISTOR

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제조업체	ASI [Advanced Semiconductor]

홈페이지	http://www.advancedsemiconductor.com

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A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. C

7525 ETHEL AVENUE

• NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

1/2

Specifications are subject to change without

CHARACTERISTICS TC = 25 °C

SYMBOL

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM

UNITS

BVCBO

IC = 50 mA

45

V

BVCES

IC = 100 mA

40

V

BVCEO

IC = 50 mA

18

V

BVEBO

IE = 10 mA

3.5

V

ICES

VCE = 15 V

10

mA

hFE

VCE = 5.0 V

IC = 5.0 A

10

---

NPN SILICON RF POWER TRANSISTOR

HF50-12F

DESCRIPTION:

The

ASI HF50-12F is a 12.5 V Class

C epitaxial silicon NPN transistor

designed primarily for land mobile

transmitter applications. This device

utilizes emitter ballasting, is extremely

suitable and capable of withstanding

high VSRW under operating

conditions.

FEATURES:

• P

G = 16 dB min. at 50 W/30 MHz

• IMD

3 = -30 dBc max. at 50 W(PEP)

• Omnigold™ Metalization System

MAXIMUM RATINGS

IC

12.0 A

VCBO

45 V

VCEO

18 V

VEBO

3.5 V

PDISS

183 W @ TC = 25 °C

TJ

-65 °C to +200 °C

TSTG

-65 °C to +150 °C

θθθθ

JC

1.05 °C/W

PACKAGE STYLE .380 4L FLG

ORDER CODE: ASI10596

MINIMUM

inches / mm

.970 / 24.64

B

C

D

E

F

G

A

MAXIMUM

.385 / 9.78

.980 / 24.89

inches / mm

H

.160 / 4.06

.180 / 4.57

DIM

.220 / 5.59

.230 / 5.84

.105 / 2.67

.085 / 2.16

I

J

.240 / 6.10

.255 / 6.48

.785 / 19.94

F

B

G

.125

Ø.125 NOM.

FULL R

D

E

C

H

.112 x 45°

A

I

J

.004 / 0.10

.006 / 0.15

.280 / 7.11

.720 / 18.29

.730 / 18.54

E

C

B

유사한 부품 번호 - ASI10596

제조업체	부품명	데이터시트	상세설명
Advanced Semiconductor	ASI10596	18Kb / 1P	NPN SILICON RF POWER TRANSISTOR

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ASI10596 데이터시트(PDF) 1 Page - Advanced Semiconductor

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