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IXFN360N15T2 데이터시트(PDF) 5 Page - IXYS Corporation

부품명 IXFN360N15T2
상세설명  GigaMOSTrenchT2 HiperFET Power MOSFET
PDF  6 Pages
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제조업체  IXYS [IXYS Corporation]
홈페이지  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXFN360N15T2 데이터시트(HTML) 5 Page - IXYS Corporation

  IXFN360N15T2 Datasheet HTML 1Page - IXYS Corporation IXFN360N15T2 Datasheet HTML 2Page - IXYS Corporation IXFN360N15T2 Datasheet HTML 3Page - IXYS Corporation IXFN360N15T2 Datasheet HTML 4Page - IXYS Corporation IXFN360N15T2 Datasheet HTML 5Page - IXYS Corporation IXFN360N15T2 Datasheet HTML 6Page - IXYS Corporation  
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© 2009 IXYS CORPORATION, All Rights Reserved
IXFN360N15T2
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
60
100
140
180
220
260
300
40
60
80
100
120
140
160
180
200
ID - Amperes
TJ = 25ºC
TJ = 125ºC
RG = 1Ω , VGS = 10V
VDS = 75V
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
0
100
200
300
400
500
600
700
12
34
56
78
9
10
RG - Ohms
0
30
60
90
120
150
180
210
t r
td(on) - - - -
TJ = 125ºC, VGS = 10V
VDS = 75V
I D = 100A
I D = 200A
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
0
100
200
300
400
500
600
700
25
35
45
55
65
75
85
95
105
115
125
TJ - Degrees Centigrade
80
100
120
140
160
180
200
220
t f
td(off) - - - -
RG = 1Ω, VGS = 10V
VDS = 75V
I D = 100A
I D = 200A
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
0
100
200
300
400
500
600
700
40
60
80
100
120
140
160
180
200
ID - Amperes
100
120
140
160
180
200
220
240
t f
td(off) - - - -
RG = 1Ω, VGS = 10V
VDS = 75V
TJ = 25ºC
TJ = 125ºC
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
100
140
180
220
260
300
340
25
35
45
55
65
75
85
95
105
115
125
TJ - Degrees Centigrade
RG = 1Ω , VGS = 10V
VDS = 75V
I D = 200A
I D = 100A
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
100
200
300
400
500
600
700
800
900
1
234
5678
9
10
RG - Ohms
100
200
300
400
500
600
700
800
900
t f
td(off) - - - -
TJ = 125ºC, VGS = 10V
VDS = 75V
I D = 200A, 100A



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