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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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L6563H 데이터시트(PDF) 35 Page - STMicroelectronics |
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L6563H 데이터시트(HTML) 35 Page - STMicroelectronics |
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35 / 48 page  L6563H Application information Doc ID 16047 Rev 2 35/48 6.8 High-voltage start-up generator Figure 51 shows the internal schematic of the high-voltage start-up generator (HV generator). It is made up of a high-voltage N-channel FET, whose gate is biased by a 15 M Ω resistor, with a temperature-compensated current generator connected to its source. Figure 51. High-voltage start-up generator: internal schematic The HV generator is physically located on a separate chip, made with BCD off-line technology able to withstand 700 V, controlled by a low-voltage chip, where all of the control functions reside. With reference to the timing diagram of Figure 52, when power is first applied to the converter the voltage on the bulk capacitor (Vin) builds up and, at about 80 V, the HV generator is enabled to operate (HV_EN is pulled high) so that it draws about 1 mA. This current, minus the device's consumption, charges the bypass capacitor connected from pin Vcc (16) to ground and makes its voltage rise almost linearly. |
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