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STM8S105C4B3C 데이터시트(PDF) 61 Page - STMicroelectronics |
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STM8S105C4B3C 데이터시트(HTML) 61 Page - STMicroelectronics |
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61 / 127 page ![]() Unit Max. (1) Ratings Symbol ±4 Injected current on NRST pin IINJ(PIN) (4) (5) ±4 Injected current on OSCIN pin ±4 Injected current on any other pin (6) ±20 Total injected current (sum of all I/O and control pins) (6) ΣIINJ(PIN) (4) (1) Data based on characterization results, not tested in production. (2) All power (V DD, VDDIO, VDDA) and ground (VSS, VSSIO, VSSA) pins must always be connected to the external supply. (3) I/O pins used simultaneously for high current source/sink must be uniformly spaced around the package between the VDDIO/VSSIO pins. (4) I INJ(PIN) must never be exceeded. This is implicitly insured if VIN maximum is respected. If VIN maximum cannot be respected, the injection current must be limited externally to the IINJ(PIN) value. A positive injection is induced by VIN>VDD while a negative injection is induced by VIN<VSS. For true open-drain pads, there is no positive injection current, and the corresponding VIN maximum must always be respected (5) Negative injection disturbs the analog performance of the device. See note in I2C interface characteristics. (6) When several inputs are submitted to a current injection, the maximum ΣI INJ(PIN) is the absolute sum of the positive and negative injected currents (instantaneous values). These results are based on characterization with ΣIINJ(PIN) maximum current injection on four I/O port pins of the device. Table 18: Thermal characteristics Unit Value Ratings Symbol °C -65 to 150 Storage temperature range TSTG 150 Maximum junction temperature TJ Operating conditions 10.3 The device must be used in operating conditions that respect the parameters in the table below. In addition, full account must be taken of all physical capacitor characteristics and tolerances. 61/127 DocID14771 Rev 9 Electrical characteristics STM8S105xx |
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