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STPSC806 데이터시트(PDF) 4 Page - STMicroelectronics |
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STPSC806 데이터시트(HTML) 4 Page - STMicroelectronics |
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4 / 7 page ![]() Characteristics STPSC806 4/7 Doc ID 16286 Rev 1 Figure 7. Total capacitive charges versus dIF/dt (typical values) Figure 5. Relative variation of thermal impedance junction to case versus pulse duration Figure 6. Non-repetitive peak surge forward current versus pulse duration (sinusoidal waveform) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 Z th(j-c)/Rth(j-c) Single pulse tp(s) 1.E+00 1.E+01 1.E+02 1.E+03 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 I FSM(A) Tc=25 °C Tc=125 °C tp(s) 0 2 4 6 8 10 12 14 16 0 50 100 150 200 250 300 350 400 450 500 Q C(nC) I F=8A V R=400 V Tj=150 °C dIF/dt(A/µs) |
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