| 전자부품 데이터시트 검색엔진 |
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PBLS4002Y 데이터시트(PDF) 6 Page - NXP Semiconductors |
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PBLS4002Y 데이터시트(HTML) 6 Page - NXP Semiconductors |
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6 / 11 page ![]() PBLS4002Y_PBLS4002V_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 12 February 2009 6 of 11 NXP Semiconductors PBLS4002Y; PBLS4002V 40 V PNP BISS loadswitch IC/IB =20 (1) Tamb = 100 °C (2) Tamb =25 °C (3) Tamb = −55 °C Tamb =25 °C (1) IC/IB = 100 (2) IC/IB =50 (3) IC/IB =10 Fig 5. TR1 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values Fig 6. TR1 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values IC/IB =20 (1) Tamb = 100 °C (2) Tamb =25 °C (3) Tamb = −55 °C Tamb =25 °C (1) IC/IB = 100 (2) IC/IB =50 (3) IC/IB =10 Fig 7. TR1 (PNP): Collector-emitter saturation resistance as a function of collector current; typical values Fig 8. TR1 (PNP): Collector-emitter saturation resistance as a function of collector current; typical values 006aaa390 IC (mA) −10−1 −103 −102 −1 −10 −10−1 −1 VCEsat (V) −10−2 (1) (2) (3) 006aaa391 IC (mA) −10−1 −103 −102 −1 −10 −10−1 −1 VCEsat (V) −10−2 (1) (2) (3) 006aaa393 IC (mA) −10−1 −103 −102 −1 −10 1 10 102 103 RCEsat ( Ω) 10−1 (1) (2) (3) 006aaa395 IC (mA) −10−1 −103 −102 −1 −10 1 10 102 103 RCEsat ( Ω) 10−1 (1) (2) (3) |
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