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STM8S105C4B3TR 데이터시트(PDF) 83 Page - STMicroelectronics

부품명 STM8S105C4B3TR
상세설명  Access line, 16 MHz STM8S 8-bit MCU, up to 32 Kbytes Flash, integrated EEPROM,10-bit ADC, timers, UART, SPI, I²C
PDF  127 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM8S105C4B3TR 데이터시트(HTML) 83 Page - STMicroelectronics

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Unit
Max
Typ
Min
Conditions
Parameter
Symbol
V
VDD + 0.3
V
0.7 x
VDD
Input high level
voltage
VIH
mV
700
Hysteresis
(1)
Vhys
kΩ
60
45
30
VDD = 5 V, VIN = VSS
Pull-up resistor
Rpu
ns
20
(2)
Fast I/Os load = 50 pF
Rise and fall
time(10 % - 90 %)
tR, tF
ns
125
(2)
Standard and high sink
I/OsLoad = 50 pF
µA
±1
(2)
VSS ≤ VIN ≤ VDD
Input leakage
current, analog
and digital
Ilkg
nA
±250
(2)
VSS ≤ VIN ≤ VDD
Analog input
leakage current
Ilkg ana
µA
±1
(2)
Injection current ±4 mA
Leakage current in
adjacent I/O
(2)
Ilkg(inj)
(1) Hysteresis voltage between Schmitt trigger switching levels. Based on characterization
results, not tested in production.
(2) Data based on characterization results, not tested in production.
Figure 24: Typical VIL and VIH vs VDD @ 4 temperatures
83/127
DocID14771 Rev 9
Electrical characteristics
STM8S105xx



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