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PDTC124TM 데이터시트(PDF) 5 Page - NXP Semiconductors |
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PDTC124TM 데이터시트(HTML) 5 Page - NXP Semiconductors |
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5 / 14 page ![]() 2004 Aug 13 5 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; R1 = 22 k Ω, R2 = open PDTC124T series THERMAL CHARACTERISTICS Notes 1. Refer to standard mounting conditions. 2. Reflow soldering is the only recommended soldering method. 3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth(j-a) thermal resistance from junction to ambient in free air SOT54 note 1 250 K/W SOT23 note 1 500 K/W SOT346 note 1 500 K/W SOT323 note 1 625 K/W SOT490 notes 1 and 2 500 K/W SOT883 notes 2 and 3 500 K/W SOT416 note 1 833 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector-base cut-off current VCB = 50 V; IE = 0 A − − 100 nA ICEO collector-emitter cut-off current VCE = 30 V; IB = 0 A − − 1 μA VCE = 30 V; IB = 0 A; Tj = 150 °C − − 50 μA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A − − 100 nA hFE DC current gain VCE = 5 V; IC = 1 mA 100 − − VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA − − 150 mV R1 input resistor 15.4 22 28.6 k Ω Cc collector capacitance IE = ie = 0 A; VCB = 10 V; f = 1 MHz − − 2.5 pF |
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