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PESDXS2UAT 데이터시트(PDF) 3 Page - NXP Semiconductors |
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PESDXS2UAT 데이터시트(HTML) 3 Page - NXP Semiconductors |
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3 / 13 page ![]() 2004 Feb 18 3 NXP Semiconductors Product data sheet Double ESD protection diodes in SOT23 package PESDxS2UAT series ORDERING INFORMATION LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Notes 1. Non-repetitive current pulse 8/20µ µs exponential decay waveform; see Fig.2. 2. Measured across either pins 1 and 3 or pins 2 and 3. TYPE NUMBER PACKAGE NAME DESCRIPTION VERSION PESD3V3S2UAT − plastic surface mounted package; 3 leads SOT23 PESD5V0S2UAT PESD12VS2UAT PESD15VS2UAT PESD24VS2UAT SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Ppp peak pulse power 8/20 µs pulse; notes 1 and 2 PESD3V3S2UAT − 330 W PESD5V0S2UAT − 260 W PESD12VS2UAT − 180 W PESD15VS2UAT − 160 W PESD24VS2UAT − 160 W Ipp peak pulse current 8/20 µs pulse; notes 1 and 2 PESD3V3S2UAT − 18 A PESD5V0S2UAT − 15 A PESD12VS2UAT − 5 A PESD15VS2UAT − 5 A PESD24VS2UAT − 3 A Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C |
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