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PMD9002D 데이터시트(PDF) 7 Page - NXP Semiconductors

부품명 PMD9002D
상세설명  MOSFET driver
PDF  15 Pages
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제조업체  NXP [NXP Semiconductors]
홈페이지  http://www.nxp.com
Logo NXP - NXP Semiconductors

PMD9002D 데이터시트(HTML) 7 Page - NXP Semiconductors

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PMD9002D_1
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 20 November 2006
7 of 15
NXP Semiconductors
PMD9002D
MOSFET driver
[1]
Pulse test: tp ≤ 300 µs; δ≤ 0.02.
VBEsat
base-emitter saturation
voltage
IC = 10 mA; IB = 0.5 mA
-
0.7
-
V
IC = 100 mA; IB = 5 mA
-
0.9
-
V
VBE
base-emitter voltage
VCE =5V; IC = 2 mA
610
660
710
mV
VCE =5V; IC = 10 mA
-
-
770
mV
Diode (D1)
VF
forward voltage
IF = −200 mA
[1] --
−1.1
V
TR2 and D1
hFE
DC current gain
VCE =5V; IC = 1 mA
200
290
450
VCE =5V; IC = 100 mA
95
140
-
VCE =5V; IC = 200 mA
24
35
-
Device
td
delay time
IC = 0.05 A; IB = 2.5 mA
-
13
-
ns
tr
rise time
-
70
-
ns
ton
turn-on time
-
83
-
ns
ts
storage time
-
1380
-
ns
tf
fall time
-
260
-
ns
toff
turn-off time
-
1640
-
ns
Table 7.
Characteristics …continued
Tamb =25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit



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