PMGD780SN_2

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Product data sheet

Rev. 02 — 19 April 2010

7 of 14

NXP Semiconductors

PMGD780SN

Dual N-channel

μTrenchMOS standard level FET

Fig 9.

Gate-source threshold voltage as a function of

junction temperature

Fig 10. Sub-threshold drain current as a function of

gate-source voltage

Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values

−60

180

120

060

03aa34

1.2

0.6

1.8

2.4

(V)

0

typ

min

03an32

1E-8

1E-7

10

-6

10

-5

10

-4

10

-3

0

0.5

1

1.5

2

2.5

(A)

min

typ

03an92

1

10

10

2

10

-1

1

10

10

2

C

(pF)